SiC Substrate
Weeprofab supplies an extensive range of silicone sheets. This material is widely used for several applications due to its easy-to-manufacture and shaping process. It can be custom cut according to your needs to suit your requirements.
- 600° F / 315° C temperature rating
- Highly durable and long-lasting
- Great sealing capabilities
- Custom sizes available
Silicone Sheet Supplier - Weeprofab
Weeprofab silicone sheets are an excellent elastomer. It offers excellent weathering and ozone resistance suitable for most demanding applications. Available in FDA and WRAS-approved grades ideal for the medical, food, and beverages industry. Weeprofab manufactures all types of silicone sheets for your applications. Whether you need silicone sponge sheets, fiberglass-reinforced silicone sheets, conductive silicone sheets, or clear silicone sheets, you can rely on Weeprofab. Our standard silicone sheets come in a variety of widths and lengths. This guarantees that you receive the ideal product for your requirements.
All sheets undergo strict quality control. Guaranteed high-quality, certified and versatile. Weeprofab support OEM and ODM services. All products are cost-effective, low MOQ, and easy to produce. Request full-rolls, custom shapes, cut-to-size, or custom thicknesses from Weeprofab.
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Faqs:
1. What is a SiC substrate, and why is it important in semiconductor applications?
A SiC (Silicon Carbide) substrate is a single – crystal wafer made of silicon carbide. It’s crucial in semiconductors because of its wide bandgap, high thermal conductivity, and high breakdown electric field. These properties enable the development of high – power, high – frequency, and high – temperature electronic devices, outperforming traditional silicon in many harsh – environment and high – performance applications.
2. What are the main crystal structures of SiC substrates, and how do they differ?
3. What methods are used to grow SiC substrates, and what are their advantages and disadvantages?
The main growth method is the physical vapor transport (PVT) method. Advantages include the ability to grow large – diameter (currently up to 6 – inch and beyond) and high – quality single crystals. Disadvantages are high growth temperatures (around 2000–2500 °C), slow growth rates, and the need for precise control of temperature gradients and gas flow. Other methods like chemical vapor deposition (CVD) are used for epitaxial layers but not yet as mature for bulk substrate growth.
4. Can SiC substrates be used with other semiconductor materials in heterostructures?
Yes. For example, GaN (Gallium Nitride) can be epitaxially grown on SiC substrates. The lattice mismatch between SiC and GaN is relatively small, allowing for the fabrication of heterostructure devices. This combination leverages SiC’s high thermal conductivity and GaN’s high electron mobility for high – power and high – frequency applications like RF amplifiers.
5. How does the cost of SiC substrates compare to silicon substrates, and what factors contribute to the difference?
SiC substrates are significantly more expensive than silicon substrates. Factors include the high cost of raw materials, the complex and slow growth process (PVT requires high temperatures and specialized equipment), and lower yields during crystal growth and wafer processing. However, as technology matures and production scales up, costs are gradually decreasing.
6. What are the typical thickness and diameter specifications of commercially available SiC substrates?
Commercially, SiC substrates are available in diameters ranging from 2 inches to 6 inches (and development is ongoing for larger sizes). Thicknesses can vary, but for typical device fabrication, wafer thicknesses are in the range of several hundred micrometers. The thickness is related to mechanical stability during processing and device operation, especially for high – power applications where heat dissipation is critical.
7. What role do SiC substrates play in the development of electric vehicles (EVs)?
In EVs, SiC substrates are used to fabricate power devices (such as MOSFETs and diodes) in the traction inverter. These devices can operate at higher temperatures and voltages, enabling more efficient power conversion, reduced energy loss, and smaller, lighter inverter systems. This contributes to increased driving range and improved overall performance of electric vehicles.
8. How are SiC substrates characterized for quality control during production?
9. How to get SiC substrates with specific crystal orientations?
Source from suppliers or grow in-house by aligning seed crystals with precision fixtures; verify via X-ray diffraction.
10. How to precisely control SiC substrate thickness?
Use in-situ optical interference monitoring, regulate source material via mass-flow controllers, or fine-tune with post-growth thinning.
11. How to overcome SiC brittleness for flexible electronics?
Fabricate ultra-thin layers, combine with flexible polymers via CVD, or use nano/micro-structuring to relieve stress.
12. How to reduce SiC substrate costs for large research projects?
Use recycled/lower-grade substrates (with treatment), optimize growth yield, or collaborate to share costs.
13. What tools simulate SiC growth for optimization?
Use MD for atomic processes, FEA for thermal/mechanical modeling, CFD for gas flow, or specialized semiconductor growth software.